SIHH125N60EF-T1GE3
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- Mfr.Part #
- SIHH125N60EF-T1GE3
- Manufacturer
- Vishay
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23A PPAK 8 X 8
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- EF
- FET Type :
- N-Channel
- Package / Case :
- 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1533pF @ 100V
- Supplier Device Package :
- PowerPAK® 8 x 8
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Factory Lead Time :
- 14 Weeks
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 12A, 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation-Max :
- 156W Tc
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SIHH125N60EF-T1GE3
N-Channel Tape & Reel (TR) 125mOhm @ 12A, 10V ±30V 1533pF @ 100V 47nC @ 10V 600V 8-PowerTDFN
SIHH125N60EF-T1GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1533pF @ 100V maximal input capacitance.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
SIHH125N60EF-T1GE3 Features
a 600V drain to source voltage (Vdss)
SIHH125N60EF-T1GE3 Applications
There are a lot of Vishay Siliconix
SIHH125N60EF-T1GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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