SIHH21N65EF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

102nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2396pF @ 100V

DS Breakdown Voltage-Min :

650V

Factory Lead Time :

21 Weeks

Threshold Voltage :

4V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

19.8A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

S-PSSO-N4

Pulsed Drain Current-Max (IDM) :

53A

Transistor Application :

SWITCHING

Published :

2016

Drain to Source Voltage (Vdss) :

650V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Avalanche Energy Rating (Eas) :

353 mJ

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

8

Continuous Drain Current (ID) :

19.8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

156W Tc

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE