SIHG80N60E-GE3
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- Mfr.Part #
- SIHG80N60E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 80A TO247AC
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 443nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Series :
- E
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- JESD-609 Code :
- e3
- Factory Lead Time :
- 14 Weeks
- Power Dissipation-Max :
- 520W Tc
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 100V
- Drain to Source Voltage (Vdss) :
- 600V
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 40A, 10V
- Datasheets
- SIHG80N60E-GE3
N-Channel Tube 30m Ω @ 40A, 10V ±30V 6900pF @ 100V 443nC @ 10V 600V TO-247-3
SIHG80N60E-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6900pF @ 100V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
SIHG80N60E-GE3 Features
a 600V drain to source voltage (Vdss)
SIHG80N60E-GE3 Applications
There are a lot of Vishay Siliconix
SIHG80N60E-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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