SIHG125N60EF-GE3

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Mfr.Part #
SIHG125N60EF-GE3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 25A TO247AC
Stock
545
In Stock :
545

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1 Channel
Number of Elements per Chip :
1
Pin Count :
3
Subcategory :
MOSFETs
Package :
Tube
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
Power Dissipation (Max) :
179W (Tc)
Minimum Operating Temperature :
- 55 C
Package / Case :
TO-247-3
FET Type :
N-Channel
Supplier Device Package :
TO-247AC
Brand :
Vishay Semiconductors
Operating Temperature :
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C :
25A (Tc)
Continuous Drain Current Id :
25A
Product Status :
Active
Series :
EF
FET Feature :
-
Base Product Number :
SIHG125
Maximum Operating Temperature :
+ 150 C
Qualification :
-
Rds On (Max) @ Id, Vgs :
125mOhm @ 12A, 10V
Power Dissipation :
179W
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1533 pF @ 100 V
Mounting Type :
Through Hole
Channel Mode :
Enhancement
MSL :
MSL 1 - Unlimited
Product Type :
MOSFET
Manufacturer :
Vishay
RoHS :
Details
Channel Type :
N
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
47 nC @ 10 V
Package Type :
TO-247AC
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Datasheets
SIHG125N60EF-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHG125N60EF-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-247-3, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, SIHG125N60EF-GE3 pinout, SIHG125N60EF-GE3 datasheet PDF, SIHG125N60EF-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHG125N60EF-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHG125N60EF-GE3


N-Channel 125mOhm @ 12A, 10V ±30V 1533 pF @ 100 V 47 nC @ 10 V 600 V TO-247-3

SIHG125N60EF-GE3 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1533 pF @ 100 V maximal input capacitance.To operate this transistor, you will need a 600 V drain to source voltage (Vdss).

SIHG125N60EF-GE3 Features


a 600 V drain to source voltage (Vdss)


SIHG125N60EF-GE3 Applications


There are a lot of Vishay Siliconix
SIHG125N60EF-GE3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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