SIHG11N80AE-GE3
- Mfr.Part #
- SIHG11N80AE-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 8A TO247AC
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Mounting Style :
- Through Hole
- Package :
- Tube
- Brand :
- Vishay / Siliconix
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-247AC
- Rise Time :
- 15 ns
- Base Product Number :
- SIHG11
- Product Category :
- MOSFET
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Channel Mode :
- Enhancement
- Channel Type :
- N
- Packaging :
- Tube
- Continuous Drain Current Id :
- 8
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Transistor Type :
- 1 N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 804 pF @ 100 V
- Vgs (Max) :
- ±30V
- Package Type :
- TO-247AC
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 8A (Tc)
- Series :
- E
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Number of Elements per Chip :
- 1
- Power Dissipation (Max) :
- 78W (Tc)
- Product Status :
- Active
- Drain to Source Voltage (Vdss) :
- 800 V
- Transistor Polarity :
- N-Channel
- Power Dissipation :
- 78
- Qualification :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 42 nC @ 10 V
- RoHS :
- Details
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 450mOhm @ 5.5A, 10V
- Manufacturer :
- Vishay
- Minimum Operating Temperature :
- - 55 C
- Subcategory :
- MOSFETs
- Number of Channels :
- 1 Channel
- FET Feature :
- -
- Datasheets
- SIHG11N80AE-GE3

N-Channel Tube 450mOhm @ 5.5A, 10V ±30V 804 pF @ 100 V 42 nC @ 10 V 800 V TO-247-3
SIHG11N80AE-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 804 pF @ 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800 V.
SIHG11N80AE-GE3 Features
a 800 V drain to source voltage (Vdss)
SIHG11N80AE-GE3 Applications
There are a lot of Vishay Siliconix
SIHG11N80AE-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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