SIHG11N80AE-GE3

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Mfr.Part #
SIHG11N80AE-GE3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 8A TO247AC
Stock
50
In Stock :
50

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Style :
Through Hole
Package :
Tube
Brand :
Vishay / Siliconix
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-247AC
Rise Time :
15 ns
Base Product Number :
SIHG11
Product Category :
MOSFET
Vgs(th) (Max) @ Id :
4V @ 250µA
Channel Mode :
Enhancement
Channel Type :
N
Packaging :
Tube
Continuous Drain Current Id :
8
Package / Case :
TO-247-3
Pin Count :
3
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
804 pF @ 100 V
Vgs (Max) :
±30V
Package Type :
TO-247AC
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Series :
E
Drive Voltage (Max Rds On, Min Rds On) :
10V
Number of Elements per Chip :
1
Power Dissipation (Max) :
78W (Tc)
Product Status :
Active
Drain to Source Voltage (Vdss) :
800 V
Transistor Polarity :
N-Channel
Power Dissipation :
78
Qualification :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
42 nC @ 10 V
RoHS :
Details
Configuration :
Single
Rds On (Max) @ Id, Vgs :
450mOhm @ 5.5A, 10V
Manufacturer :
Vishay
Minimum Operating Temperature :
- 55 C
Subcategory :
MOSFETs
Number of Channels :
1 Channel
FET Feature :
-
Datasheets
SIHG11N80AE-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHG11N80AE-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-247-3, Number of Channels:1 Channel, SIHG11N80AE-GE3 pinout, SIHG11N80AE-GE3 datasheet PDF, SIHG11N80AE-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHG11N80AE-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHG11N80AE-GE3


N-Channel Tube 450mOhm @ 5.5A, 10V ±30V 804 pF @ 100 V 42 nC @ 10 V 800 V TO-247-3

SIHG11N80AE-GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 804 pF @ 100 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800 V.

SIHG11N80AE-GE3 Features


a 800 V drain to source voltage (Vdss)


SIHG11N80AE-GE3 Applications


There are a lot of Vishay Siliconix
SIHG11N80AE-GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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