SIHG068N60EF-GE3

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Mfr.Part #
SIHG068N60EF-GE3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 41A TO247AC
Stock
485
In Stock :
485

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2628 pF @ 100 V
Vgs (Max) :
±30V
Product Category :
MOSFET
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
41A (Tc)
Vgs(th) (Max) @ Id :
5V @ 250μA
Minimum Operating Temperature :
- 55 C
FET Feature :
-
Series :
EF
Product Type :
MOSFET
FET Type :
N-Channel
RoHS :
Details
Mounting Style :
Through Hole
Brand :
Vishay Semiconductors
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Drive Voltage (Max Rds On, Min Rds On) :
10V
Channel Mode :
Enhancement
Package / Case :
TO-247-3
Subcategory :
MOSFETs
Supplier Device Package :
TO-247AC
Qualification :
-
Rds On (Max) @ Id, Vgs :
68mOhm @ 16A, 10V
MSL :
MSL 1 - Unlimited
Base Product Number :
SIHG068
Operating Temperature :
-55°C ~ 150°C (TJ)
Continuous Drain Current Id :
41A
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Manufacturer :
Vishay
Gate Charge (Qg) (Max) @ Vgs :
77 nC @ 10 V
Drain to Source Voltage (Vdss) :
600 V
Power Dissipation (Max) :
250W (Tc)
Package :
Tube
Power Dissipation :
250W
Channel Type :
N Channel
Datasheets
SIHG068N60EF-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHG068N60EF-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C ~ 150°C (TJ), Number of Channels:1 Channel, SIHG068N60EF-GE3 pinout, SIHG068N60EF-GE3 datasheet PDF, SIHG068N60EF-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHG068N60EF-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHG068N60EF-GE3


N-Channel 68mOhm @ 16A, 10V ±30V 2628 pF @ 100 V 77 nC @ 10 V 600 V TO-247-3

SIHG068N60EF-GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2628 pF @ 100 V.This transistor requires a drain-source voltage (Vdss) of 600 V.

SIHG068N60EF-GE3 Features


a 600 V drain to source voltage (Vdss)


SIHG068N60EF-GE3 Applications


There are a lot of Vishay Siliconix
SIHG068N60EF-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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