SIHG14N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

56 mJ

Number of Terminations :

3

Fall Time (Typ) :

26 ns

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

208W Tc

Radiation Hardening :

No

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

500V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Rds On (Max) @ Id, Vgs :

400m Ω @ 7A, 10V

FET Type :

N-Channel

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

14A

Vgs (Max) :

±30V

Factory Lead Time :

13 Weeks

Drain-source On Resistance-Max :

0.4Ohm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1144pF @ 100V

Mount :

Through Hole

Turn On Delay Time :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Weight :

38.000013g

Case Connection :

DRAIN

Element Configuration :

Single

Number of Pins :

3

Turn-Off Delay Time :

29 ns

Rise Time :

27ns

Transistor Element Material :

SILICON

Published :

2015

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-247AC

Packaging :

Tube

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V