SIHG73N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

105ns

Gate Charge (Qg) (Max) @ Vgs :

362nC @ 10V

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

JEDEC-95 Code :

TO-247AC

Weight :

38.000013g

Mount :

Through Hole

Published :

2012

Fall Time (Typ) :

120 ns

Length :

15.87mm

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Power Dissipation :

520W

Number of Channels :

1

Factory Lead Time :

14 Weeks

Packaging :

Tube

Number of Elements :

1

Resistance :

39mOhm

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

520W Tc

Pin Count :

3

Rds On (Max) @ Id, Vgs :

39m Ω @ 36A, 10V

Radiation Hardening :

No

Element Configuration :

Single

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Turn-Off Delay Time :

290 ns

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Turn On Delay Time :

63 ns

Width :

5.31mm

RoHS Status :

ROHS3 Compliant

Height :

20.82mm

Continuous Drain Current (ID) :

73A

Input Capacitance (Ciss) (Max) @ Vds :

7700pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

2V