SIHG73N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Fall Time (Typ) :

180 ns

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

362nC @ 10V

Number of Terminations :

3

Power Dissipation-Max :

520W Tc

Number of Pins :

3

Package / Case :

TO-247-3

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Number of Elements :

1

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Turn-Off Delay Time :

290 ns

Rds On (Max) @ Id, Vgs :

39m Ω @ 36A, 10V

Mount :

Through Hole

Continuous Drain Current (ID) :

73A

Number of Channels :

1

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

7700pF @ 100V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Published :

2016

Case Connection :

DRAIN

Weight :

38.000013g

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

63 ns

Rise Time :

158ns

Operating Mode :

ENHANCEMENT MODE