SIHG64N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

650V

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

47m Ω @ 32A, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation-Max :

520W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2015

Drain Current-Max (Abs) (ID) :

64A

Drain-source On Resistance-Max :

0.047Ohm

Pulsed Drain Current-Max (IDM) :

202A

Current - Continuous Drain (Id) @ 25°C :

64A Tc

JEDEC-95 Code :

TO-247AC

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

1800 mJ

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

650V

Number of Terminations :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

369nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7497pF @ 100V