SIHG47N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Weight :

38.000013g

Published :

2014

Power Dissipation :

417W

Drain-source On Resistance-Max :

0.072Ohm

Drain to Source Voltage (Vdss) :

650V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5682pF @ 100V

Number of Terminations :

3

Turn On Delay Time :

47 ns

Mount :

Through Hole

Number of Channels :

1

JEDEC-95 Code :

TO-247AC

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Vgs (Max) :

±30V

Package / Case :

TO-247-3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

273nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Rise Time :

87ns

Mounting Type :

Through Hole

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

47A

Rds On (Max) @ Id, Vgs :

72m Ω @ 24A, 10V

Number of Elements :

1

Transistor Application :

SWITCHING

Turn-Off Delay Time :

156 ns

DS Breakdown Voltage-Min :

650V

Number of Pins :

3

Fall Time (Typ) :

103 ns

Power Dissipation-Max :

417W Tc

Element Configuration :

Single