SIHG47N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

91 ns

Number of Pins :

3

Mount :

Through Hole

Element Configuration :

Single

Vgs (Max) :

±30V

Fall Time (Typ) :

56 ns

Package / Case :

TO-247-3

Rise Time :

56ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

67m Ω @ 24A, 10V

Continuous Drain Current (ID) :

47A

Weight :

38.000013g

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Mounting Type :

Through Hole

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Number of Channels :

1

REACH SVHC :

Unknown

JEDEC-95 Code :

TO-247AC

Number of Terminations :

3

Lead Free :

Lead Free

Power Dissipation-Max :

379W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4854pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel

Turn On Delay Time :

30 ns

Number of Elements :

1

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Published :

2014

Factory Lead Time :

22 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.065Ohm

RoHS Status :

ROHS3 Compliant