SIHG47N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Power Dissipation-Max :

357W Tc

Height :

20.7mm

Package / Case :

TO-247-3

Number of Elements :

1

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

FET Type :

N-Channel

Power Dissipation :

357W

Length :

15.87mm

Published :

2014

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

38.000013g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Number of Pins :

3

Continuous Drain Current (ID) :

47A

Fall Time (Typ) :

13 ns

Width :

5.31mm

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Drain to Source Resistance :

64mOhm

Turn On Delay Time :

24 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

64mOhm @ 24A, 10V

Turn-Off Delay Time :

94 ns

Rds On Max :

64 mΩ

Resistance :

64mOhm

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

11ns

Lead Free :

Lead Free

Threshold Voltage :

2.5V

Input Capacitance :

9.62nF

Input Capacitance (Ciss) (Max) @ Vds :

9620pF @ 100V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

600V

Supplier Device Package :

TO-247AC