SIHG47N60E-E3
- Mfr.Part #
- SIHG47N60E-E3
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247AC
- Stock
- 8,730
- In Stock :
- 8,730
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 15.87mm
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 47A
- Supplier Device Package :
- TO-247AC
- Power Dissipation :
- 357W
- Number of Channels :
- 1
- REACH SVHC :
- Unknown
- Width :
- 5.31mm
- Rise Time :
- 11ns
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9620pF @ 100V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 13 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Rds On Max :
- 64 mΩ
- Height :
- 20.7mm
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- FET Type :
- N-Channel
- Weight :
- 38.000013g
- Rds On (Max) @ Id, Vgs :
- 64mOhm @ 24A, 10V
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 64mOhm
- Drain to Source Breakdown Voltage :
- 600V
- Input Capacitance :
- 9.62nF
- Drain to Source Resistance :
- 64mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 357W Tc
- Published :
- 2012
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 94 ns
- Mount :
- Through Hole
- Threshold Voltage :
- 2.5V
- Turn On Delay Time :
- 24 ns
- Datasheets
- SIHG47N60E-E3

N-Channel Tube 64mOhm @ 24A, 10V ±30V 9620pF @ 100V 220nC @ 10V 600V TO-247-3
SIHG47N60E-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9620pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 47A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 94 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 64mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 24 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.5V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
SIHG47N60E-E3 Features
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 94 ns
single MOSFETs transistor is 64mOhm
a threshold voltage of 2.5V
a 600V drain to source voltage (Vdss)
SIHG47N60E-E3 Applications
There are a lot of Vishay Siliconix
SIHG47N60E-E3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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