SIHG460B-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Weight :

38.000013g

Packaging :

Tube

FET Type :

N-Channel

JEDEC-95 Code :

TO-247AC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

31ns

Turn On Delay Time :

24 ns

DS Breakdown Voltage-Min :

500V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

Number of Pins :

3

Mounting Type :

Through Hole

Turn-Off Delay Time :

117 ns

Transistor Element Material :

SILICON

Width :

5.31mm

Fall Time (Typ) :

56 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

250m Ω @ 10A, 10V

Number of Elements :

1

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

278W Tc

Case Connection :

DRAIN

REACH SVHC :

Unknown

Published :

2012

Number of Terminations :

3

Power Dissipation :

278W

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.25Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3094pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

20A

Length :

15.87mm

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Height :

20.82mm

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

62A