SIHG33N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Power Dissipation-Max :

313W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

508 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4026pF @ 100V

Number of Elements :

1

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Factory Lead Time :

21 Weeks

JEDEC-95 Code :

TO-247AC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

171nC @ 10V

Threshold Voltage :

4V

Drain-source On Resistance-Max :

0.109Ohm

DS Breakdown Voltage-Min :

650V

Rds On (Max) @ Id, Vgs :

109m Ω @ 16.5A, 10V

Drain to Source Voltage (Vdss) :

650V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

31.6A

Current - Continuous Drain (Id) @ 25°C :

31.6A Tc

Terminal Position :

Single