SIHG33N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

Supplier Device Package :

TO-247AC

Gate Charge (Qg) (Max) @ Vgs :

173nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

4.04nF

Package / Case :

TO-247-3

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

650V

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Resistance :

90mOhm

Published :

2016

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

105mOhm @ 16.5A, 10V

Vgs (Max) :

±30V

Rds On Max :

105 mΩ

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

4040pF @ 100V

Power Dissipation-Max :

313W Tc

Continuous Drain Current (ID) :

32.4A

Current - Continuous Drain (Id) @ 25°C :

32.4A Tc

Number of Pins :

3

RoHS Status :

ROHS3 Compliant