SIHG33N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Case Connection :

DRAIN

Continuous Drain Current (ID) :

33A

Packaging :

Tube

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

4V

Number of Terminations :

3

Turn On Delay Time :

28 ns

Input Capacitance (Ciss) (Max) @ Vds :

3454pF @ 100V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Published :

2014

Element Configuration :

Single

Vgs (Max) :

±30V

Power Dissipation-Max :

278W Tc

Drain-source On Resistance-Max :

0.098Ohm

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Turn-Off Delay Time :

161 ns

Package / Case :

TO-247-3

Rise Time :

43ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AC

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

98m Ω @ 16.5A, 10V

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

48 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA