SIHG33N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2V

Rds On Max :

99 mΩ

Power Dissipation :

278W

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Rise Time :

90ns

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

FET Type :

N-Channel

Supplier Device Package :

TO-247AC

Fall Time (Typ) :

80 ns

Number of Elements :

1

Weight :

38.000013g

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Published :

2016

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

56 ns

Factory Lead Time :

14 Weeks

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

3508pF @ 100V

Drain to Source Voltage (Vdss) :

600V

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Continuous Drain Current (ID) :

33A

Number of Pins :

3

Element Configuration :

Single

Turn-Off Delay Time :

150 ns

Radiation Hardening :

No

Input Capacitance :

3.508nF

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

99mOhm

REACH SVHC :

Unknown

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

99mOhm @ 16.5A, 10V

Number of Channels :

1

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Power Dissipation-Max :

278W Tc