SIHG32N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Vgs (Max) :

±30V

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

89A

Continuous Drain Current (ID) :

30A

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Element Configuration :

Single

Power Dissipation-Max :

390W Tc

DS Breakdown Voltage-Min :

500V

Avalanche Energy Rating (Eas) :

225 mJ

Weight :

38.000013g

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Number of Terminations :

3

Number of Elements :

1

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Rise Time :

75ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 100V

Threshold Voltage :

3V

FET Type :

N-Channel

Packaging :

Tube

Lead Free :

Lead Free

JEDEC-95 Code :

TO-247AC

Turn On Delay Time :

27 ns

Mount :

Through Hole

Factory Lead Time :

8 Weeks

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

55 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

58 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Case Connection :

DRAIN