SIHG32N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

55 ns

Pulsed Drain Current-Max (IDM) :

89A

Factory Lead Time :

13 Weeks

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AC

Weight :

38.000013g

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Avalanche Energy Rating (Eas) :

225 mJ

FET Type :

N-Channel

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

27 ns

DS Breakdown Voltage-Min :

500V

Power Dissipation :

390W

Power Dissipation-Max :

390W Tc

Package / Case :

TO-247-3

Radiation Hardening :

No

Number of Channels :

1

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

500V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 100V

Rise Time :

75ns

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Packaging :

Tube

Number of Terminations :

3

Published :

2015

Transistor Element Material :

SILICON

Turn-Off Delay Time :

58 ns

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Number of Pins :

3