SIHG30N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

2.6nF

Width :

5.31mm

Drain to Source Voltage (Vdss) :

600V

Fall Time (Typ) :

36 ns

Min Operating Temperature :

-55°C

Threshold Voltage :

2V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 100V

Max Operating Temperature :

150°C

Weight :

38.000013g

Number of Elements :

1

Factory Lead Time :

17 Weeks

Number of Channels :

1

Height :

20.7mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Packaging :

Tube

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

125mOhm @ 15A, 10V

Length :

15.87mm

Package / Case :

TO-247-3

Rds On Max :

125 mΩ

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Resistance :

125mOhm

Power Dissipation-Max :

250W Tc

FET Type :

N-Channel

Mount :

Through Hole

Number of Pins :

3

Published :

2014

Radiation Hardening :

No

Drain to Source Resistance :

125mOhm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

29A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rise Time :

32ns

Supplier Device Package :

TO-247AC

Power Dissipation :

250W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

63 ns

Turn On Delay Time :

19 ns