SIHG28N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

40ns

JEDEC-95 Code :

TO-247AC

Published :

2014

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

24 ns

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

82 ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

123m Ω @ 14A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Fall Time (Typ) :

39 ns

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

250W Tc

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

2714pF @ 100V

Factory Lead Time :

21 Weeks

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

75A

FET Type :

N-Channel

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V