SIHG25N40D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Element Configuration :

Single

Number of Terminations :

3

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Pulsed Drain Current-Max (IDM) :

78A

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

400V

Weight :

38.000013g

Power Dissipation-Max :

278W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1707pF @ 100V

Turn On Delay Time :

21 ns

Number of Channels :

1

Package / Case :

TO-247-3

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

556 mJ

Published :

2011

JEDEC-95 Code :

TO-247AC

DS Breakdown Voltage-Min :

400V

Rds On (Max) @ Id, Vgs :

170m Ω @ 13A, 10V

Number of Elements :

1

Factory Lead Time :

13 Weeks

Fall Time (Typ) :

37 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

40 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Rise Time :

57ns

Continuous Drain Current (ID) :

25A