SIHG24N80AEF-GE3

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Mfr.Part #
SIHG24N80AEF-GE3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
EF SERIES POWER MOSFET WITH FAST
Stock
396
In Stock :
396

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Continuous Drain Current Id :
20A
Subcategory :
MOSFETs
Power Dissipation (Max) :
208W (Tc)
Packaging :
Tube
MSL :
MSL 1 - Unlimited
Product Category :
MOSFET
Supplier Device Package :
TO-247AC
Input Capacitance (Ciss) (Max) @ Vds :
1889 pF @ 100 V
Vgs(th) (Max) @ Id :
4V @ 250µA
Qualification :
-
Brand :
Vishay / Siliconix
Vgs (Max) :
±30V
Minimum Operating Temperature :
- 55 C
Channel Type :
N
Channel Mode :
Enhancement
Rise Time :
33 ns
Package Type :
TO-247AC
Operating Temperature :
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs :
90 nC @ 10 V
Package :
Tube
Manufacturer :
Vishay
Number of Channels :
1 Channel
Package / Case :
TO-247-3
Mounting Style :
SMD/SMT
Drain to Source Voltage (Vdss) :
800 V
Maximum Operating Temperature :
+ 150 C
Series :
EF
Product Status :
Active
Drive Voltage (Max Rds On, Min Rds On) :
10V
Mounting Type :
Through Hole
Product Type :
MOSFET
FET Feature :
-
Configuration :
Single
Rds On (Max) @ Id, Vgs :
195mOhm @ 10A, 10V
Power Dissipation :
208W
FET Type :
N-Channel
Datasheets
SIHG24N80AEF-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHG24N80AEF-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 150°C (TJ), Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, SIHG24N80AEF-GE3 pinout, SIHG24N80AEF-GE3 datasheet PDF, SIHG24N80AEF-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHG24N80AEF-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHG24N80AEF-GE3


N-Channel Tube 195mOhm @ 10A, 10V ±30V 1889 pF @ 100 V 90 nC @ 10 V 800 V TO-247-3

SIHG24N80AEF-GE3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1889 pF @ 100 V.Operating this transistor requires a 800 V drain to source voltage (Vdss).

SIHG24N80AEF-GE3 Features


a 800 V drain to source voltage (Vdss)


SIHG24N80AEF-GE3 Applications


There are a lot of Vishay Siliconix
SIHG24N80AEF-GE3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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