SIHG24N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

800 V

Rise Time :

44 ns

Number of Elements per Chip :

2

Product Category :

MOSFET

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

1836 pF @ 100 V

Mounting Style :

SMD/SMT

Continuous Drain Current Id :

21

Power Dissipation (Max) :

208W (Tc)

Pin Count :

3

Transistor Polarity :

N-Channel

Transistor Type :

E Series Power MOSFET

Gate Charge (Qg) (Max) @ Vgs :

89 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Channel Mode :

Enhancement

RoHS :

Details

Subcategory :

MOSFETs

Supplier Device Package :

TO-247AC

Channel Type :

N

Base Product Number :

SIHG24

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 150 C

Series :

-

Package / Case :

TO-247-3

Qualification :

-

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Rds On (Max) @ Id, Vgs :

184mOhm @ 10A, 10V

Manufacturer :

Vishay

Mounting Type :

Through Hole

Packaging :

Tube

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation :

208

Brand :

Vishay / Siliconix

Vgs (Max) :

±30V

Product Status :

Active

Package :

Tube

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Package Type :

TO-247AC

Configuration :

Single