SIHG24N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

650V

Rds On (Max) @ Id, Vgs :

145mOhm @ 12A, 10V

Number of Pins :

3

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

2740pF @ 100V

Power Dissipation-Max :

250W Tc

Rds On Max :

145 mΩ

Width :

5.31mm

Radiation Hardening :

No

Fall Time (Typ) :

69 ns

Resistance :

145mOhm

Turn On Delay Time :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Height :

20.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Length :

15.87mm

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

FET Type :

N-Channel

Threshold Voltage :

2V

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Number of Elements :

1

Continuous Drain Current (ID) :

24A

Rise Time :

84ns

Input Capacitance :

2.74nF

Turn-Off Delay Time :

70 ns

Power Dissipation :

250W

Number of Channels :

1

Drain to Source Breakdown Voltage :

650V

Weight :

38.000013g

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Resistance :

145mOhm

Lead Free :

Lead Free

Supplier Device Package :

TO-247AC

Min Operating Temperature :

-55°C

REACH SVHC :

Unknown

Mount :

Through Hole