SIHG22N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Type :

N-Channel

Pbfree Code :

yes

Published :

2014

REACH SVHC :

Unknown

Factory Lead Time :

18 Weeks

Power Dissipation :

227W

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2415pF @ 100V

Fall Time (Typ) :

38 ns

Turn-Off Delay Time :

73 ns

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Continuous Drain Current (ID) :

22A

Gate to Source Voltage (Vgs) :

4V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Terminations :

3

Rise Time :

33ns

Packaging :

Tube

Mount :

Through Hole

Drain to Source Breakdown Voltage :

650V

Pulsed Drain Current-Max (IDM) :

56A

JEDEC-95 Code :

TO-247AC

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

227W Tc

Package / Case :

TO-247-3