SIHG22N60S-E3
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- Mfr.Part #
- SIHG22N60S-E3
- Manufacturer
- Vishay
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A TO247AC
- Stock
- 4,700
- In Stock ：
- 4,700
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 250W
- Fall Time (Typ) :
- 59 ns
- Power Dissipation-Max :
- 250W Tc
- Radiation Hardening :
- No
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 5620pF @ 25V
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- Published :
- 2010
- Drain to Source Resistance :
- 160mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- REACH SVHC :
- Unknown
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- Rise Time :
- 68ns
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 11A, 10V
- FET Type :
- N-Channel
- Rds On Max :
- 190 mΩ
- Drain to Source Voltage (Vdss) :
- 600V
- Turn-Off Delay Time :
- 77 ns
- Nominal Vgs :
- 4 V
- Input Capacitance :
- 5.62nF
- Mount :
- Through Hole
- Threshold Voltage :
- 4V
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-247AC
- Continuous Drain Current (ID) :
- 22A
- Turn On Delay Time :
- 24 ns
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 190mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- SIHG22N60S-E3
N-Channel Tube 190mOhm @ 11A, 10V 5620pF @ 25V 110nC @ 10V 600V TO-247-3
SIHG22N60S-E3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5620pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.This device has a drain-to-source resistance of 160mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).
SIHG22N60S-E3 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 77 ns
single MOSFETs transistor is 160mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
SIHG22N60S-E3 Applications
There are a lot of Vishay Siliconix
SIHG22N60S-E3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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