SIHG22N60EL-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1690pF @ 100V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

21A

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

227W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.197Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-247AC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

286 mJ

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

45A

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Rds On (Max) @ Id, Vgs :

197m Ω @ 11A, 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant