SIHG22N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

67A

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

230m Ω @ 11A, 10V

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

47 ns

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Rise Time :

42ns

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Threshold Voltage :

3V

Turn On Delay Time :

21 ns

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

40 ns

Number of Channels :

1

REACH SVHC :

Unknown

Length :

15.87mm

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

500V

Case Connection :

DRAIN

Number of Terminations :

3

Width :

5.31mm

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Power Dissipation-Max :

312W Tc

FET Type :

N-Channel

Element Configuration :

Single

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AC

Weight :

38.000013g

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

20.82mm

Input Capacitance (Ciss) (Max) @ Vds :

1938pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

22A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

312W

Mount :

Through Hole