SIHG21N65EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mount :

Through Hole

Drain-source On Resistance-Max :

0.18ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-247AC

Drain to Source Voltage (Vdss) :

650V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2322pF @ 100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

650V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Terminal Position :

Single

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

106nC @ 10V

Avalanche Energy Rating (Eas) :

367 mJ

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

53A

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

21A

Number of Terminations :

3

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

21 Weeks

Transistor Application :

SWITCHING

Power Dissipation-Max :

208W Tc