SIHG20N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

REACH SVHC :

Unknown

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.27Ohm

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

270m Ω @ 10A, 10V

Pulsed Drain Current-Max (IDM) :

80A

FET Type :

N-Channel

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

250W Tc

Number of Terminations :

3

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Nominal Vgs :

5 V

Transistor Element Material :

SILICON

Fall Time (Typ) :

44 ns

Drain to Source Breakdown Voltage :

500V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Elements :

1

Threshold Voltage :

5V

Power Dissipation :

292W

Number of Channels :

1

Terminal Position :

Single

JEDEC-95 Code :

TO-247AC

Rise Time :

27ns

Turn On Delay Time :

80 ns

Operating Temperature :

-55°C~150°C TJ

Published :

2017

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

38.000013g

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

20A

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

Packaging :

Tube

Turn-Off Delay Time :

32 ns

Input Capacitance (Ciss) (Max) @ Vds :

2942pF @ 25V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260