SIHG17N80E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Drain to Source Breakdown Voltage :

800V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

22 ns

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Through Hole

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2408pF @ 100V

Power Dissipation-Max :

208W Tc

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

290m Ω @ 8.5A, 10V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Factory Lead Time :

14 Weeks

Series :

E

Continuous Drain Current (ID) :

15A

Height :

24.99mm

Turn-Off Delay Time :

71 ns

Power Dissipation :

208W