SIHG17N60D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

56ns

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Width :

5.31mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

15.87mm

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

37 ns

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 100V

Fall Time (Typ) :

30 ns

Number of Terminations :

3

Factory Lead Time :

8 Weeks

Weight :

38.000013g

Number of Pins :

3

FET Type :

N-Channel

Turn On Delay Time :

22 ns

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

340m Ω @ 8A, 10V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Continuous Drain Current (ID) :

17A

Packaging :

Tube

Power Dissipation-Max :

277.8W Tc

Height :

20.82mm

JEDEC-95 Code :

TO-247AC

Radiation Hardening :

No

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

48A

Threshold Voltage :

3V

Transistor Element Material :

SILICON

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Published :

2012