SIHG17N60D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 100V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

340m Ω @ 8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Transistor Application :

SWITCHING

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Case Connection :

DRAIN

Power Dissipation-Max :

277.8W Tc

Drain to Source Breakdown Voltage :

600V

Published :

2015

Pulsed Drain Current-Max (IDM) :

48A

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Rise Time :

56ns

Continuous Drain Current (ID) :

17A

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

5V

Turn On Delay Time :

22 ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Weight :

38.000013g

Number of Channels :

1

Turn-Off Delay Time :

37 ns

Element Configuration :

Single

Fall Time (Typ) :

30 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

JEDEC-95 Code :

TO-247AC

Factory Lead Time :

20 Weeks