SIHG16N50C-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

29 ns

Turn On Delay Time :

27 ns

Time@Peak Reflow Temperature-Max (s) :

40

Number of Channels :

1

Power Dissipation :

250W

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Power Dissipation-Max :

250W Tc

Transistor Element Material :

SILICON

Factory Lead Time :

11 Weeks

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

FET Type :

N-Channel

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

40A

Weight :

38.000013g

Element Configuration :

Single

Threshold Voltage :

3V

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Pin Count :

3

Drain to Source Breakdown Voltage :

500V

Fall Time (Typ) :

31 ns

REACH SVHC :

Unknown

JEDEC-95 Code :

TO-247AC

Continuous Drain Current (ID) :

16A

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

16A Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Radiation Hardening :

No

Vgs (Max) :

±30V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Published :

2007

Rise Time :

156ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)