SIHG15N80AE-GE3

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Mfr.Part #
SIHG15N80AE-GE3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 800V 13A TO247AC
Stock
15,677
In Stock :
15,677

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Product Status :
Active
Channel Mode :
Enhancement
Package Type :
TO-247AC
Product Category :
MOSFET
Number of Elements per Chip :
1
Rds On (Max) @ Id, Vgs :
350mOhm @ 7.5A, 10V
Drain to Source Voltage (Vdss) :
800 V
Mounting Type :
Through Hole
Rise Time :
22 ns
Current - Continuous Drain (Id) @ 25°C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Transistor Type :
1 N - Channel
Mounting Style :
Through Hole
Continuous Drain Current Id :
13
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
Qualification :
-
Channel Type :
N
Power Dissipation (Max) :
156W (Tc)
MSL :
MSL 1 - Unlimited
Vgs (Max) :
±30V
Pin Count :
3
Series :
E
Input Capacitance (Ciss) (Max) @ Vds :
1093 pF @ 100 V
Base Product Number :
SIHG15
RoHS :
Details
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
53 nC @ 10 V
Vgs(th) (Max) @ Id :
4V @ 250µA
Brand :
Vishay / Siliconix
FET Type :
N-Channel
Supplier Device Package :
TO-247AC
Number of Channels :
1 Channel
Power Dissipation :
156
FET Feature :
-
Subcategory :
MOSFETs
Minimum Operating Temperature :
- 55 C
Manufacturer :
Vishay
Operating Temperature :
-55°C ~ 150°C (TJ)
Packaging :
Tube
Package :
Tube
Datasheets
SIHG15N80AE-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHG15N80AE-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1 Channel, Operating Temperature:-55°C ~ 150°C (TJ), SIHG15N80AE-GE3 pinout, SIHG15N80AE-GE3 datasheet PDF, SIHG15N80AE-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHG15N80AE-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHG15N80AE-GE3


N-Channel Tube 350mOhm @ 7.5A, 10V ±30V 1093 pF @ 100 V 53 nC @ 10 V 800 V TO-247-3

SIHG15N80AE-GE3 Overview


A device's maximum input capacitance is 1093 pF @ 100 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 800 V drain to source voltage (Vdss).

SIHG15N80AE-GE3 Features


a 800 V drain to source voltage (Vdss)


SIHG15N80AE-GE3 Applications


There are a lot of Vishay Siliconix
SIHG15N80AE-GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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