SIHG15N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Power Dissipation-Max :

180W Tc

Drain Current-Max (Abs) (ID) :

15A

DS Breakdown Voltage-Min :

600V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

39A

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

JEDEC-95 Code :

TO-247AC

Factory Lead Time :

18 Weeks

Published :

2017

Mounting Type :

Through Hole

Number of Terminations :

3

Drain-source On Resistance-Max :

0.28Ohm

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

280m Ω @ 8A, 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Elements :

1

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

102 mJ

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Series :

E

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V