SI9936BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Turn On Delay Time :

10 ns

Number of Terminations :

8

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

DS Breakdown Voltage-Min :

30V

Base Part Number :

SI9936

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1V

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

35m Ω @ 6A, 10V

Mounting Type :

Surface Mount

Max Power Dissipation :

1.1W

Turn-Off Delay Time :

25 ns

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

10 ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Published :

2009

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

4.5A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

250

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.035Ohm

Mount :

Surface Mount

Weight :

186.993455mg

Number of Channels :

2

FET Feature :

Logic Level Gate

REACH SVHC :

Unknown