SI9934BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

4.8A

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Transistor Element Material :

SILICON

Series :

TrenchFET®

Number of Terminations :

8

Turn-Off Delay Time :

80 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

19 ns

Fall Time (Typ) :

50 ns

Pbfree Code :

yes

Nominal Vgs :

-1.4 V

Drain to Source Voltage (Vdss) :

12V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

12V

Element Configuration :

Dual

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

Threshold Voltage :

-1.4V

FET Type :

2 P-Channel (Dual)

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.4A, 4.5V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Terminal Finish :

MATTE TIN

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Drain-source On Resistance-Max :

0.035Ohm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.1W

Base Part Number :

SI9934

Rise Time :

35ns

Pin Count :

8

Peak Reflow Temperature (Cel) :

250

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Max Power Dissipation :

1.1W