SI9434BDY-T1-E3
- Mfr.Part #
- SI9434BDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.5A 8SO
- Stock
- 5,420
- In Stock :
- 5,420
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Power Dissipation-Max :
- 1.3W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs (Max) :
- ±8V
- Mount :
- Surface Mount
- Power Dissipation :
- 1.3W
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 4.5V
- DS Breakdown Voltage-Min :
- 20V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 45 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Resistance :
- 40mOhm
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 15 ns
- Element Configuration :
- Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- FET Type :
- P-Channel
- Drain Current-Max (Abs) (ID) :
- 4.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 8
- Published :
- 2013
- Rise Time :
- 45ns
- Number of Terminations :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Turn-Off Delay Time :
- 80 ns
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- -6.3A
- Pulsed Drain Current-Max (IDM) :
- 20A
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 8V
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 6.3A, 4.5V
- Number of Pins :
- 8
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Ta
- Datasheets
- SI9434BDY-T1-E3

P-Channel Tape & Reel (TR) 40m Ω @ 6.3A, 4.5V ±8V 18nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
SI9434BDY-T1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 4.5A.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 20A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
SI9434BDY-T1-E3 Features
a continuous drain current (ID) of -6.3A
the turn-off delay time is 80 ns
based on its rated peak drain current 20A.
a 20V drain to source voltage (Vdss)
SI9434BDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI9434BDY-T1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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