SI9424BDY-T1-E3

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Mfr.Part #
SI9424BDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 20V 5.6A 8SO
Stock
1,270
In Stock :
1,270

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
8
Drain Current-Max (Abs) (ID) :
5.6A
Number of Pins :
8
Width :
4mm
Peak Reflow Temperature (Cel) :
260
Series :
TrenchFET®
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 4.5V
Length :
5mm
Turn-Off Delay Time :
130 ns
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
-7.1A
Current - Continuous Drain (Id) @ 25°C :
5.6A Ta
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
25m Ω @ 7.1A, 4.5V
Vgs(th) (Max) @ Id :
850mV @ 250μA
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
40
Rise Time :
40ns
Power Dissipation-Max :
1.25W Ta
Terminal Finish :
Matte Tin (Sn)
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Turn On Delay Time :
30 ns
Terminal Position :
Dual
Power Dissipation :
2W
Element Configuration :
Single
Radiation Hardening :
No
Pin Count :
8
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
9V
Fall Time (Typ) :
40 ns
Height :
1.55mm
Operating Temperature :
-55°C~150°C TJ
Published :
2009
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Mount :
Surface Mount
Number of Elements :
1
Vgs (Max) :
±9V
ECCN Code :
EAR99
Resistance :
25mOhm
Drain to Source Breakdown Voltage :
20V
Pbfree Code :
yes
Datasheets
SI9424BDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI9424BDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, SI9424BDY-T1-E3 pinout, SI9424BDY-T1-E3 datasheet PDF, SI9424BDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI9424BDY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI9424BDY-T1-E3


P-Channel Tape & Reel (TR) 25m Ω @ 7.1A, 4.5V ±9V 40nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)

SI9424BDY-T1-E3 Overview


This device conducts a continuous drain current (ID) of -7.1A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 5.6A.When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 9V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

SI9424BDY-T1-E3 Features


a continuous drain current (ID) of -7.1A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 130 ns


SI9424BDY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI9424BDY-T1-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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