SI9410BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Fall Time (Typ) :

15 ns

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Lead Free :

Lead Free

Published :

2016

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

6.2A

Turn On Delay Time :

10 ns

Width :

4mm

Series :

TrenchFET®

Weight :

506.605978mg

Number of Channels :

1

Number of Pins :

8

Height :

1.55mm

Continuous Drain Current (ID) :

8.1A

Terminal Position :

Dual

REACH SVHC :

Unknown

Rise Time :

15ns

Resistance :

24mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Single

Power Dissipation-Max :

1.5W Ta

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

1 V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Power Dissipation :

1.5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

5mm

Radiation Hardening :

No

Turn-Off Delay Time :

30 ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 8.1A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Terminations :

8