SI9433BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

55ns

Drain to Source Breakdown Voltage :

-20V

Element Configuration :

Single

Power Dissipation :

1.3W

Rds On (Max) @ Id, Vgs :

40m Ω @ 6.2A, 4.5V

Vgs (Max) :

±12V

Weight :

506.605978mg

Height :

1.55mm

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain Current-Max (Abs) (ID) :

4.5A

Turn On Delay Time :

40 ns

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Turn-Off Delay Time :

65 ns

Fall Time (Typ) :

55 ns

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Resistance :

40mOhm

Width :

4mm

Length :

5mm

Threshold Voltage :

-600mV

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Continuous Drain Current (ID) :

-6.2A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Number of Terminations :

8

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Pin Count :

8

REACH SVHC :

Unknown

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Power Dissipation-Max :

1.3W Ta

Time@Peak Reflow Temperature-Max (s) :

30