SI7252DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

PowerPAK® SO-8 Dual

REACH SVHC :

No SVHC

Number of Pins :

8

Packaging :

Digi-Reel®

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

46W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

7 ns

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Threshold Voltage :

1.5V

Weight :

506.605978mg

Drain-source On Resistance-Max :

0.017Ohm

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Height :

1.12mm

Mount :

Surface Mount

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Element Configuration :

Dual

Transistor Element Material :

SILICON

Number of Terminations :

6

Turn-Off Delay Time :

18 ns

Number of Elements :

2

Rise Time :

12ns

Mounting Type :

Surface Mount

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-C6

Power Dissipation :

3.5W

Input Capacitance (Ciss) (Max) @ Vds :

1170pF @ 50V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Base Part Number :

SI7252

Case Connection :

DRAIN

Radiation Hardening :

No

Continuous Drain Current (ID) :

36.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

C BEND

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Rds On (Max) @ Id, Vgs :

18m Ω @ 15A, 10V