SI7214DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

4.6A

Max Power Dissipation :

1.3W

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

40m Ω @ 6.4A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.6A

ECCN Code :

EAR99

Continuous Drain Current (ID) :

5.9A

Turn On Delay Time :

7 ns

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Height :

1.04mm

Width :

3.05mm

Series :

TrenchFET®

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

6

Radiation Hardening :

No

Published :

2015

Threshold Voltage :

3V

REACH SVHC :

Unknown

Number of Elements :

2

JESD-30 Code :

R-XDSO-C6

Drain-source On Resistance-Max :

0.04Ohm

Base Part Number :

SI7214

Terminal Form :

C BEND

Fall Time (Typ) :

6 ns

Pin Count :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Dual

Power Dissipation :

1.3W

Length :

3.05mm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Package / Case :

PowerPAK® 1212-8 Dual

Contact Plating :

Tin

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount