SI7212DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

JESD-30 Code :

S-XDSO-C6

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Rise Time :

12ns

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Turn On Delay Time :

10 ns

Package / Case :

PowerPAK® 1212-8 Dual

Avalanche Energy Rating (Eas) :

5 mJ

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.036Ohm

Rds On (Max) @ Id, Vgs :

36m Ω @ 6.8A, 10V

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Terminal Form :

C BEND

Continuous Drain Current (ID) :

4.9A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Max Power Dissipation :

1.3W

Power Dissipation :

1.3W

JESD-609 Code :

e3

Published :

2015

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI7212

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Factory Lead Time :

14 Weeks

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

Transistor Application :

SWITCHING

Pin Count :

8

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Transistor Element Material :

SILICON