SI4688DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-SO

Continuous Drain Current (ID) :

8.9A

Input Capacitance :

1.58nF

Number of Channels :

1

Turn On Delay Time :

13 ns

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1580pF @ 15V

Min Operating Temperature :

-55°C

Length :

5mm

Mount :

Surface Mount

Rise Time :

10ns

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

33 ns

Fall Time (Typ) :

10 ns

Drain to Source Resistance :

11mOhm

Rds On Max :

11 mΩ

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

11mOhm @ 12A, 10V

FET Type :

N-Channel

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

8.9A Ta

Weight :

186.993455mg

Mounting Type :

Surface Mount

Width :

4mm

Power Dissipation-Max :

1.4W Ta

Published :

2013

Element Configuration :

Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.55mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8