SI4686DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Power Dissipation-Max :

3W Ta 5.2W Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

18.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

18.2A Tc

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

3W

JESD-609 Code :

e3

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Turn On Delay Time :

20 ns

Mount :

Surface Mount

Number of Pins :

8

Number of Terminations :

8

REACH SVHC :

No SVHC

Resistance :

9.5MOhm

Turn-Off Delay Time :

20 ns

Element Configuration :

Single

Length :

5mm

Number of Elements :

1

Series :

TrenchFET®

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Height :

1.55mm

Radiation Hardening :

No

Rise Time :

20ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 13.8A, 10V

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Width :

4mm

Fall Time (Typ) :

8 ns

Published :

2017

Lead Free :

Lead Free

Weight :

186.993455mg